PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
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NXP Semiconductors N.V.
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BLS6G3135-12008 BLS6G3135-120-15 |
LDMOS S-Band radar power transistor
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NXP Semiconductors
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BLL6H1214-500 |
LDMOS L-band radar power transistor
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NXP Semiconductors
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TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,; SiGe:C Low Noise High Linearity Amplifier
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NXP Semiconductors N.V.
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BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF power LDMOS transistor
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Philips Semiconductors NXP Semiconductors
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BLF6G20-180RN BLF6G20LS-180RN |
Power LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G20LS-180RN<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G20LS-180RN<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
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CEL[California Eastern Labs]
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